{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532559","patent":{"patent_number":"US-11532559","title":"Semiconductor device and method for making the semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-02-25T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a first dielectric layer, a cobalt-containing conductive feature, a non-cobalt conductive feature, a second dielectric layer, a first tungsten contact feature, a second tungsten contact feature, and a tungsten barrier layer. The cobalt-containing conductive feature is disposed in the first dielectric layer. The non-cobalt conductive feature is disposed in the first dielectric layer, and is spaced apart from the cobalt-containing conductive feature. The second dielectric layer is disposed over the first dielectric layer. The first tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the cobalt-containing conductive feature. The second tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the non-cobalt conductive feature. The tungsten barrier layer surrounds the second tungsten contact feature, and is connected to the second tungsten contact feature, the non-cobalt conductive feature and the second dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for making the semiconductor device","description":"A semiconductor device includes a first dielectric layer, a cobalt-containing conductive feature, a non-cobalt conductive feature, a second dielectric layer, a first tungsten contact feature, a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532559","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532559","citation_suggestion":"Patentable. \"Semiconductor device and method for making the semiconductor device\" (US-11532559). https://patentable.app/patents/US-11532559","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532559","json":"https://patentable.app/api/llm-context/US-11532559","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:28:12.416Z"}