{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532583","patent":{"patent_number":"US-11532583","title":"Semiconductor structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2021-04-13T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor structure is provided. A layout of a substrate is provided. The layout includes a surface having an inner region and an outer region surrounding the inner region. An under bump metallurgy (UBM) pad region within the outer region is defined. The UBM pad region is partitioned into a first zone and a second zone, wherein the first zone faces towards a center of the substrate, and the second zone faces away from the center of the substrate. The substrate is provided according to the layout, wherein the providing of the substrate includes forming a conductive via in the substrate. The conductive via is disposed outside the second zone and at least partially overlaps the first zone from a top view perspective. A UBM pad is formed over the conductive via and within the UBM pad region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and manufacturing method thereof","description":"A method of forming a semiconductor structure is provided. A layout of a substrate is provided. The layout includes a surface having an inner region and an outer region surrounding the inner region. A","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532583","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532583","citation_suggestion":"Patentable. \"Semiconductor structure and manufacturing method thereof\" (US-11532583). https://patentable.app/patents/US-11532583","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532583","json":"https://patentable.app/api/llm-context/US-11532583","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:29:35.817Z"}