{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532614","patent":{"patent_number":"US-11532614","title":"FinFET varactor with low threshold voltage and method of making the same","assignee":null,"inventors":[],"filing_date":"2021-04-22T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"FinFET varactors having low threshold voltages and methods of making the same are disclosed herein. An exemplary FinFET varactor includes a fin and a gate structure disposed over a portion of the fin, such that the gate structure is disposed between a first source/drain feature and a second source/drain feature that include a first type dopant. The portion of the fin includes the first type dopant and a second type dopant. A dopant concentration of the first type dopant and a dopant concentration of the second type dopant vary from an interface between the fin and the gate structure to a first depth in the fin. The dopant concentration of the first type dopant is greater than the dopant concentration of the second type dopant from a second depth to a third depth in the fin, where the second depth and the third depth are less than the first depth."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET varactor with low threshold voltage and method of making the same","description":"FinFET varactors having low threshold voltages and methods of making the same are disclosed herein. An exemplary FinFET varactor includes a fin and a gate structure disposed over a portion of the fin,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532614","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532614","citation_suggestion":"Patentable. \"FinFET varactor with low threshold voltage and method of making the same\" (US-11532614). https://patentable.app/patents/US-11532614","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532614","json":"https://patentable.app/api/llm-context/US-11532614","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:27:48.366Z"}