{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532620","patent":{"patent_number":"US-11532620","title":"Integrated circuit devices and methods of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2021-11-11T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","B82Y"],"num_claims":20,"abstract":"Integrated circuit devices may include a fin-type active area, a semiconductor liner contacting a side wall of the fin-type active area and including a protrusion portion protruding outward from the fin-type active area in the vicinity of an edge of an upper surface of the fin-type active area, and an isolation layer spaced apart from the fin-type active area with the semiconductor liner therebetween. To manufacture the integrated circuit devices, a crystalline semiconductor layer covering the fin-type active area with a first thickness and an amorphous semiconductor layer covering the mask pattern with a second thickness may be formed, an extended crystalline semiconductor layer covering the mask pattern may be formed by crystalizing the amorphous semiconductor layer, and a semiconductor liner including a protrusion portion may be formed from the extended crystalline semiconductor layer and the crystalline semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuit devices and methods of manufacturing the same","description":"Integrated circuit devices may include a fin-type active area, a semiconductor liner contacting a side wall of the fin-type active area and including a protrusion portion protruding outward from the f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532620","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532620","citation_suggestion":"Patentable. \"Integrated circuit devices and methods of manufacturing the same\" (US-11532620). https://patentable.app/patents/US-11532620","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532620","json":"https://patentable.app/api/llm-context/US-11532620","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:26:33.335Z"}