{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532636","patent":{"patent_number":"US-11532636","title":"Three-dimensional memory devices having through array contacts and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2020-11-30T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Embodiments of three-dimensional (3D) memory devices having through array contacts (TACs) and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack including interleaved a plurality of dielectric layers and a plurality of sacrificial layers is formed above a substrate. A channel structure extending vertically through the dielectric stack is formed. A first opening extending vertically through the dielectric stack is formed. A spacer is formed in a plurality of shallow recesses and on a sidewall of the first opening. The plurality of shallow recesses abut the sidewall of the first opening. A TAC extending vertically through the dielectric stack is formed by depositing a conductor layer in contact with the spacer in the first opening. A slit extending vertically through the dielectric stack is formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory devices having through array contacts and methods for forming the same","description":"Embodiments of three-dimensional (3D) memory devices having through array contacts (TACs) and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532636","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532636","citation_suggestion":"Patentable. \"Three-dimensional memory devices having through array contacts and methods for forming the same\" (US-11532636). https://patentable.app/patents/US-11532636","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532636","json":"https://patentable.app/api/llm-context/US-11532636","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:16:29.253Z"}