{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532670","patent":{"patent_number":"US-11532670","title":"3D memory and manufacturing process","assignee":null,"inventors":[],"filing_date":"2020-12-22T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":15,"abstract":"The invention provides a microelectronic device comprising at least two memory cells each comprising a so-called selection transistor and a memory element associated with said selection transistor, each transistor comprising a channel in the form of a wire extending in a first direction (x), a gate bordering said channel, a source extending in a second direction (y), and a drain connected to the memory element, said transistors being stacked in a third direction (z) and each occupying a given altitude level in the third direction (z), the microelectronic device wherein the source and the drain are entirely covered by spacers projecting in the third direction (z) in a plane (xy). The invention also provides a method for manufacturing such a device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D memory and manufacturing process","description":"The invention provides a microelectronic device comprising at least two memory cells each comprising a so-called selection transistor and a memory element associated with said selection transistor, ea","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532670","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532670","citation_suggestion":"Patentable. \"3D memory and manufacturing process\" (US-11532670). https://patentable.app/patents/US-11532670","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532670","json":"https://patentable.app/api/llm-context/US-11532670","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:59:21.850Z"}