{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532701","patent":{"patent_number":"US-11532701","title":"Semiconductor isolation structure and method for making the semiconductor isolation structure","assignee":null,"inventors":[],"filing_date":"2021-03-11T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor isolation structure includes a handle layer, a buried insulation layer, a semiconductor layer, a deep trench isolation structure, and a heavy doping region. The buried insulation layer is disposed on the handle layer. The semiconductor layer is disposed on the buried insulation layer and has a doping type. The semiconductor layer has a functional area in which doped regions of a semiconductor device are to be formed. The deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional area. The heavy doping region is formed in the semiconductor layer, is disposed between the functional area and the deep trench isolation structure, and is surrounded by the deep trench isolation structure. The heavy doping region has the doping type. A doping concentration of the heavy doping region is higher than that of the semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor isolation structure and method for making the semiconductor isolation structure","description":"A semiconductor isolation structure includes a handle layer, a buried insulation layer, a semiconductor layer, a deep trench isolation structure, and a heavy doping region. The buried insulation layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532701","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532701","citation_suggestion":"Patentable. \"Semiconductor isolation structure and method for making the semiconductor isolation structure\" (US-11532701). https://patentable.app/patents/US-11532701","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532701","json":"https://patentable.app/api/llm-context/US-11532701","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:33:36.719Z"}