{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532702","patent":{"patent_number":"US-11532702","title":"Source/drain isolation structures for leakage prevention","assignee":null,"inventors":[],"filing_date":"2020-05-19T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"The present disclosure is directed to gate-all-around (GAA) transistor structures with a low level of leakage current and low power consumption. For example, the GAA transistor includes a semiconductor layer with a first source/drain (S/D) epitaxial structure and a second S/D epitaxial structure disposed thereon, where the first and second S/D epitaxial structures are spaced apart by semiconductor nano-sheet layers. The semiconductor structure further includes isolation structures interposed between the semiconductor layer and each of the first and second S/D epitaxial structures. The GAA transistor further includes a gate stack surrounding the semiconductor nano-sheet layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Source/drain isolation structures for leakage prevention","description":"The present disclosure is directed to gate-all-around (GAA) transistor structures with a low level of leakage current and low power consumption. For example, the GAA transistor includes a semiconducto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532702","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532702","citation_suggestion":"Patentable. \"Source/drain isolation structures for leakage prevention\" (US-11532702). https://patentable.app/patents/US-11532702","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532702","json":"https://patentable.app/api/llm-context/US-11532702","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:10:58.135Z"}