{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532706","patent":{"patent_number":"US-11532706","title":"Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures","assignee":null,"inventors":[],"filing_date":"2019-03-29T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":28,"abstract":"Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures, and methods of fabricating gate-all-around integrated circuit structures having embedded GeSnB source or drain structures, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires above a fin, the fin including a defect modification layer on a first semiconductor layer, and a second semiconductor layer on the defect modification layer. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires, and a second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal nanowires."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures","description":"Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures, and methods of fabricating gate-all-around integrated circuit structures having embedded GeSnB source or","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532706","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532706","citation_suggestion":"Patentable. \"Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures\" (US-11532706). https://patentable.app/patents/US-11532706","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532706","json":"https://patentable.app/api/llm-context/US-11532706","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:36:24.455Z"}