{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532715","patent":{"patent_number":"US-11532715","title":"Source/drain contacts for semiconductor devices and methods of forming","assignee":null,"inventors":[],"filing_date":"2021-08-09T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","B82Y","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a first source/drain region and a second source/drain region disposed on opposite sides of a plurality of conductive layers. A dielectric layer overlies the first source/drain region, the second source/drain region, and the plurality of conductive layers. An electrical contact extends through the dielectric layer and the first source/drain region, where a first surface of the electrical contact is a surface of the electrical contact that is closest to the substrate, a first surface of the plurality of conductive layers is a surface of the plurality of conductive layers that is closest to the substrate, and the first surface of the electrical contact is closer to the substrate than the first surface of the plurality of conductive layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Source/drain contacts for semiconductor devices and methods of forming","description":"A semiconductor device includes a first source/drain region and a second source/drain region disposed on opposite sides of a plurality of conductive layers. A dielectric layer overlies the first sourc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532715","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532715","citation_suggestion":"Patentable. \"Source/drain contacts for semiconductor devices and methods of forming\" (US-11532715). https://patentable.app/patents/US-11532715","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532715","json":"https://patentable.app/api/llm-context/US-11532715","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:39:10.854Z"}