{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532728","patent":{"patent_number":"US-11532728","title":"Method semiconductor device fabrication with improved epitaxial source/drain proximity control","assignee":null,"inventors":[],"filing_date":"2019-11-26T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a substrate, a first fin extending from the substrate, a first gate structure over the substrate and engaging the first fin, and a first epitaxial feature partially embedded in the first fin and raised above a top surface of the first fin. The semiconductor device further includes a second fin extending from the substrate, a second gate structure over the substrate and engaging the second fin, and a second epitaxial feature partially embedded in the second fin and raised above a top surface of the second fin. A first depth of the first epitaxial feature embedded into the first fin is smaller than a second depth of the second epitaxial feature embedded into the second fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method semiconductor device fabrication with improved epitaxial source/drain proximity control","description":"A semiconductor device includes a substrate, a first fin extending from the substrate, a first gate structure over the substrate and engaging the first fin, and a first epitaxial feature partially emb","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532728","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532728","citation_suggestion":"Patentable. \"Method semiconductor device fabrication with improved epitaxial source/drain proximity control\" (US-11532728). https://patentable.app/patents/US-11532728","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532728","json":"https://patentable.app/api/llm-context/US-11532728","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:10:11.612Z"}