{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532732","patent":{"patent_number":"US-11532732","title":"Multi-gate device and method of fabrication thereof","assignee":null,"inventors":[],"filing_date":"2021-04-23T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a semiconductor fin extruding from a substrate; forming a sacrificial capping layer on sidewalls of the semiconductor fin; forming first and second dielectric fins sandwiching the semiconductor fin; forming a sacrificial gate stack over the semiconductor fin, the sacrificial capping layer, and the first and second dielectric fins; forming gate spacers on sidewalls of the sacrificial gate stack; removing the sacrificial gate stack to form a gate trench, wherein the gate trench exposes the semiconductor fin, the sacrificial capping layer, and the first and second dielectric fins; removing the sacrificial capping layer from the gate trench, thereby exposing the sidewalls of the semiconductor fin; and forming a metal gate stack in the gate trench engaging the semiconductor fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-gate device and method of fabrication thereof","description":"A method includes forming a semiconductor fin extruding from a substrate; forming a sacrificial capping layer on sidewalls of the semiconductor fin; forming first and second dielectric fins sandwichin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532732","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532732","citation_suggestion":"Patentable. \"Multi-gate device and method of fabrication thereof\" (US-11532732). https://patentable.app/patents/US-11532732","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532732","json":"https://patentable.app/api/llm-context/US-11532732","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:41:38.497Z"}