{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532749","patent":{"patent_number":"US-11532749","title":"Semiconductor structure with blocking layer","assignee":null,"inventors":[],"filing_date":"2020-12-11T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure is provided. The semiconductor structure includes a gate structure, a first source/drain structure, and a contact structure. The gate structure has a gate dielectric layer over a first fin structure. The first source/drain structure is positioned in the first fin structure and adjacent to the gate structure. The first source/drain structure includes a first epitaxial layer in contact with the top surface of the first fin structure and a second epitaxial layer over the first epitaxial layer and extending above a bottom surface of the gate dielectric layer. The contact structure extends into the first source/drain structure. The top surface of the first fin structure is between a top surface and a bottom surface of the first source/drain structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure with blocking layer","description":"A semiconductor structure is provided. The semiconductor structure includes a gate structure, a first source/drain structure, and a contact structure. The gate structure has a gate dielectric layer ov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532749","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532749","citation_suggestion":"Patentable. \"Semiconductor structure with blocking layer\" (US-11532749). https://patentable.app/patents/US-11532749","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532749","json":"https://patentable.app/api/llm-context/US-11532749","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:34:33.276Z"}