{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532753","patent":{"patent_number":"US-11532753","title":"Nanowire semiconductor device having high-quality epitaxial layer and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2021-03-10T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["B82Y","H01L"],"num_claims":16,"abstract":"A nanowire semiconductor device having a high-quality epitaxial layer and a method of manufacturing the same are provided. According to an embodiment, the semiconductor device may include: a substrate; one or more nanowires spaced apart from the substrate, wherein the nanowires each extend along a curved longitudinal extending direction; and one or more semiconductor layers formed around peripheries of the respective nanowires to at least partially surround the respective nanowires, wherein the respective semiconductor layers around the respective nanowires are spaced apart from each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nanowire semiconductor device having high-quality epitaxial layer and method of manufacturing the same","description":"A nanowire semiconductor device having a high-quality epitaxial layer and a method of manufacturing the same are provided. According to an embodiment, the semiconductor device may include: a substrate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532753","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532753","citation_suggestion":"Patentable. \"Nanowire semiconductor device having high-quality epitaxial layer and method of manufacturing the same\" (US-11532753). https://patentable.app/patents/US-11532753","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532753","json":"https://patentable.app/api/llm-context/US-11532753","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:01:05.351Z"}