{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935744","patent":{"patent_number":"US-11935744","title":"Method for manufacturing nitride semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-12-16T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method for manufacturing a nitride semiconductor device includes the steps of growing a GaN channel layer on an SiC substrate using a vertical MOCVD furnace set at a first temperature using H2 as a carrier gas, and TMG and NH3 as raw materials, holding the SiC substrate having the grown GaN channel layer in the MOCVD furnace set at a second temperature higher than the first temperature using H2 as a carrier gas, the MOCVD furnace being supplied with NH3, and growing an InAlN layer on the GaN channel layer using the MOCVD furnace set at a third temperature lower than the first temperature using N2 as a carrier gas, and TMI, TMA, and NH3 as raw materials."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing nitride semiconductor device","description":"A method for manufacturing a nitride semiconductor device includes the steps of growing a GaN channel layer on an SiC substrate using a vertical MOCVD furnace set at a first temperature using H2 as a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935744","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935744","citation_suggestion":"Patentable. \"Method for manufacturing nitride semiconductor device\" (US-11935744). https://patentable.app/patents/US-11935744","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935744","json":"https://patentable.app/api/llm-context/US-11935744","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:30:04.190Z"}