{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935794","patent":{"patent_number":"US-11935794","title":"Method for forming long channel back-side power rail device","assignee":null,"inventors":[],"filing_date":"2022-12-12T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming long channel back-side power rail device","description":"A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935794","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935794","citation_suggestion":"Patentable. \"Method for forming long channel back-side power rail device\" (US-11935794). https://patentable.app/patents/US-11935794","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935794","json":"https://patentable.app/api/llm-context/US-11935794","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:22:40.991Z"}