{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935834","patent":{"patent_number":"US-11935834","title":"Method for preparing semiconductor device with contact structure","assignee":null,"inventors":[],"filing_date":"2023-07-03T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"The present disclosure relates to a semiconductor device with a contact structure and a method for preparing the semiconductor device. The semiconductor device includes a source/drain structure disposed over a semiconductor substrate, and a dielectric layer disposed over the source/drain structure. The semiconductor device also includes a polysilicon stack disposed over the source/drain structure and surrounded by the dielectric layer. The polysilicon stack includes a first polysilicon layer and a second polysilicon layer disposed over the first polysilicon layer. The first polysilicon layer is undoped, and the second polysilicon layer is doped. The semiconductor device further includes a contact structure disposed directly over the polysilicon stack and surrounded by the dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for preparing semiconductor device with contact structure","description":"The present disclosure relates to a semiconductor device with a contact structure and a method for preparing the semiconductor device. The semiconductor device includes a source/drain structure dispos","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935834","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935834","citation_suggestion":"Patentable. \"Method for preparing semiconductor device with contact structure\" (US-11935834). https://patentable.app/patents/US-11935834","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935834","json":"https://patentable.app/api/llm-context/US-11935834","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:20:44.218Z"}