{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935850","patent":{"patent_number":"US-11935850","title":"Method for fabricating semiconductor device with slanted conductive layers","assignee":null,"inventors":[],"filing_date":"2021-11-30T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present application discloses a method for fabricating a semiconductor device with slanted conductive layers. The method for fabricating a semiconductor device includes providing a substrate, forming a first insulating layer above the substrate, forming first slanted recesses along the first insulating layer, and forming first slanted conductive layers in the first slanted recesses and a top conductive layer covering the first slanted conductive layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor device with slanted conductive layers","description":"The present application discloses a method for fabricating a semiconductor device with slanted conductive layers. The method for fabricating a semiconductor device includes providing a substrate, form","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935850","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935850","citation_suggestion":"Patentable. \"Method for fabricating semiconductor device with slanted conductive layers\" (US-11935850). https://patentable.app/patents/US-11935850","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935850","json":"https://patentable.app/api/llm-context/US-11935850","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:55:57.539Z"}