{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935862","patent":{"patent_number":"US-11935862","title":"Three-dimensional memory devices and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2021-06-22T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a first semiconductor structure, a second semiconductor structure opposite to the first semiconductor structure, and an interface layer between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a memory stack having a plurality of interleaved stack conductive layers and stack dielectric layers. The second semiconductor structure includes a plurality of peripheral circuits electrically connected to the memory stack. The interface layer includes single crystalline silicon and a plurality of interconnects between the memory stack and the peripheral circuits."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory devices and methods for forming the same","description":"Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a first semiconductor structure, a second semiconductor structure ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935862","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935862","citation_suggestion":"Patentable. \"Three-dimensional memory devices and methods for forming the same\" (US-11935862). https://patentable.app/patents/US-11935862","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935862","json":"https://patentable.app/api/llm-context/US-11935862","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:35:56.045Z"}