{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935891","patent":{"patent_number":"US-11935891","title":"Non-silicon N-type and P-type stacked transistors for integrated circuit devices","assignee":null,"inventors":[],"filing_date":"2022-06-13T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["B82Y","H01L"],"num_claims":20,"abstract":"Multiple non-silicon semiconductor material layers may be stacked within a fin structure. The multiple non-silicon semiconductor material layers may include one or more layers that are suitable for P-type transistors. The multiple non-silicon semiconductor material layers may further include one or more one or more layers that are suited for N-type transistors. The multiple non-silicon semiconductor material layers may further include one or more intervening layers separating the N-type from the P-type layers. The intervening layers may be at least partially sacrificial, for example to allow one or more of a gate, source, or drain to wrap completely around a channel region of one or more of the N-type and P-type transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-silicon N-type and P-type stacked transistors for integrated circuit devices","description":"Multiple non-silicon semiconductor material layers may be stacked within a fin structure. The multiple non-silicon semiconductor material layers may include one or more layers that are suitable for P-","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935891","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935891","citation_suggestion":"Patentable. \"Non-silicon N-type and P-type stacked transistors for integrated circuit devices\" (US-11935891). https://patentable.app/patents/US-11935891","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935891","json":"https://patentable.app/api/llm-context/US-11935891","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:40:18.286Z"}