{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935895","patent":{"patent_number":"US-11935895","title":"Semiconductor device structure and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2022-01-25T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"A semiconductor device structure includes a first MOSFET device disposed at a first region of a semiconductor substrate, the first MOSFET device comprises a bulk semiconductor layer contacting the semiconductor substrate, and the bulk semiconductor layer has a first height, a first gate structure disposed over the bulk semiconductor layer, and first S/D regions disposed in the bulk semiconductor layer on opposite sides of the first gate structure; a second MOSFET device disposed at a second region of the semiconductor substrate, the second MOSFET device comprises a semiconductor layer disposed over the semiconductor substrate, and the semiconductor layer has a second height different than the first height, a second gate structure disposed over the semiconductor layer, and second S/D regions disposed in the semiconductor layer on opposite sides of the second gate structure; an insulator between and in contact with the semiconductor substrate and semiconductor layer; and a spacer layer isolating the first and second MOSFET devices, and a portion of the spacer layer is disposed between and in contact with the insulator layer and bulk semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structure and methods of forming the same","description":"A semiconductor device structure includes a first MOSFET device disposed at a first region of a semiconductor substrate, the first MOSFET device comprises a bulk semiconductor layer contacting the sem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935895","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935895","citation_suggestion":"Patentable. \"Semiconductor device structure and methods of forming the same\" (US-11935895). https://patentable.app/patents/US-11935895","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935895","json":"https://patentable.app/api/llm-context/US-11935895","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:11:09.755Z"}