{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935925","patent":{"patent_number":"US-11935925","title":"Method for manufacturing semiconductor structure and semiconductor structure","assignee":null,"inventors":[],"filing_date":"2021-07-30T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"A method for manufacturing a semiconductor structure includes the following operations. A first conductive layer, a second conductive layer and a passivation layer are successively formed on a semiconductor substrate. The passivation layer and the second conductive layer are patterned to form a primary gate pattern. A portion of the first conductive layer that is not covered by the primary gate pattern, is exposed. The primary gate pattern is subjected with plasma treatment to form a first protective layer. A dielectric layer is formed. The exposed portion of the first conductive layer is removed to retain a portion of the first conductive layer covered by the primary gate pattern. A second protective layer is formed on a side wall of the exposed portion of the first conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor structure and semiconductor structure","description":"A method for manufacturing a semiconductor structure includes the following operations. A first conductive layer, a second conductive layer and a passivation layer are successively formed on a semicon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935925","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935925","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor structure and semiconductor structure\" (US-11935925). https://patentable.app/patents/US-11935925","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935925","json":"https://patentable.app/api/llm-context/US-11935925","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T19:15:47.454Z"}