{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935930","patent":{"patent_number":"US-11935930","title":"Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors","assignee":null,"inventors":[],"filing_date":"2021-11-30T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L","B82Y","B82Y"],"num_claims":20,"abstract":"Embodiments herein describe FETs with channels that form wrap-around contacts (a female portion of a female/male connection) with metal contacts (a male portion of the female/male connection) in order to connect the channels to the drain and source regions. In one embodiment, a first conductive contact is formed underneath a dummy channel. In addition an encapsulation material wraps around the first conductive contact. The dummy channel and the encapsulation material can then be removed and replaced by the material of the channel which, as a result, include a female portion that wraps around the first conductive contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors","description":"Embodiments herein describe FETs with channels that form wrap-around contacts (a female portion of a female/male connection) with metal contacts (a male portion of the female/male connection) in order","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935930","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935930","citation_suggestion":"Patentable. \"Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors\" (US-11935930). https://patentable.app/patents/US-11935930","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935930","json":"https://patentable.app/api/llm-context/US-11935930","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:05:07.520Z"}