{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935946","patent":{"patent_number":"US-11935946","title":"Silicon-controlled rectifiers in a silicon-on-insulator technology","assignee":null,"inventors":[],"filing_date":"2022-06-27T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure comprises a semiconductor substrate, a dielectric layer on the semiconductor substrate, and a first well and a second well in the semiconductor substrate beneath the dielectric layer. The first well has a first conductivity type, the second well has a second conductivity type opposite to the first conductivity type, and the second well adjoins the first well along a p-n junction. The structure further comprises a first terminal and a second terminal above the dielectric layer, a first connection extending through the dielectric layer from the first terminal to the first well, and a second connection extending through the dielectric layer from the second terminal to the second well."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon-controlled rectifiers in a silicon-on-insulator technology","description":"Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure comprises a semiconductor substrate, a dielectric layer on the semico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935946","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935946","citation_suggestion":"Patentable. \"Silicon-controlled rectifiers in a silicon-on-insulator technology\" (US-11935946). https://patentable.app/patents/US-11935946","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935946","json":"https://patentable.app/api/llm-context/US-11935946","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:05:19.178Z"}