{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11935949","patent":{"patent_number":"US-11935949","title":"3D semiconductor device and structure with metal layers and memory cells","assignee":null,"inventors":[],"filing_date":"2023-11-12T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"3D semiconductor device including: a first level including a first single crystal layer and first transistors, and at least one first metal layer-which includes interconnects between the first transistors forming control circuits-which overlays the first single crystal layer; second metal layer overlaying first metal layer; a second level including second transistors, first memory cells (each including at least one second transistor) and overlaying second metal layer; a third level including third transistors (at least one includes a polysilicon channel), second memory cells (each including at least one third transistor and cell is partially disposed atop control circuits) and overlaying the second level; control circuits control data written to second memory cells; third metal layer disposed above third level; fourth metal layer includes global power distribution grid, has a thickness at least twice the second metal layer, disposed above third metal layer; fourth level includes single-crystal silicon, atop fourth metal layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D semiconductor device and structure with metal layers and memory cells","description":"3D semiconductor device including: a first level including a first single crystal layer and first transistors, and at least one first metal layer-which includes interconnects between the first transis","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11935949","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11935949","citation_suggestion":"Patentable. \"3D semiconductor device and structure with metal layers and memory cells\" (US-11935949). https://patentable.app/patents/US-11935949","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11935949","json":"https://patentable.app/api/llm-context/US-11935949","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:05:14.350Z"}