{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11937431","patent":{"patent_number":"US-11937431","title":"Semiconductor device having gate electrode with multi-layers and electronic system including the same","assignee":null,"inventors":[],"filing_date":"2021-04-07T00:00:00.000Z","publication_date":"2024-03-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A semiconductor device includes a substrate having a first area and a second area and an active area limited by an isolation layer in the first area and the second area, a p-type gate electrode doped with p-type impurities and including a p-type lower gate layer and a p-type upper gate layer on the p-type lower gate layer with a first gate dielectric layer disposed between the active area and the p-type gate electrode in the first area, and an n-type gate electrode doped with n-type impurities and including an n-type lower gate layer and an n-type upper gate layer on the n-type lower gate layer with a second gate dielectric layer disposed between the active area and the n-type gate electrode in the second area."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having gate electrode with multi-layers and electronic system including the same","description":"A semiconductor device includes a substrate having a first area and a second area and an active area limited by an isolation layer in the first area and the second area, a p-type gate electrode doped ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11937431","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11937431","citation_suggestion":"Patentable. \"Semiconductor device having gate electrode with multi-layers and electronic system including the same\" (US-11937431). https://patentable.app/patents/US-11937431","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11937431","json":"https://patentable.app/api/llm-context/US-11937431","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:23:12.481Z"}