{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942134","patent":{"patent_number":"US-11942134","title":"Memory circuit and write method","assignee":null,"inventors":[],"filing_date":"2022-11-18T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory circuit includes a memory array including a plurality of memory cells, each memory cell of the plurality of memory cells including an n-type channel layer including a metal oxide material, and a gate structure overlying and adjacent to the n-type channel layer, the gate structure including a conductive layer overlying a ferroelectric layer. The memory circuit is configured to apply a gate voltage to each memory cell of the plurality of memory cells in first and second write operations, the gate voltage has a positive polarity and a first magnitude in the first write operation and a negative polarity and a second magnitude greater than the first magnitude in the second write operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory circuit and write method","description":"A memory circuit includes a memory array including a plurality of memory cells, each memory cell of the plurality of memory cells including an n-type channel layer including a metal oxide material, an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942134","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942134","citation_suggestion":"Patentable. \"Memory circuit and write method\" (US-11942134). https://patentable.app/patents/US-11942134","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942134","json":"https://patentable.app/api/llm-context/US-11942134","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:36:43.798Z"}