{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942136","patent":{"patent_number":"US-11942136","title":"Memory device having shared read/write access line for 2-transistor vertical memory cell","assignee":null,"inventors":[],"filing_date":"2022-08-15T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Some embodiments include apparatuses and methods operating the apparatuses. One of the apparatuses includes a first data line located over a substrate, a second data line located over the first data line, a third data line located over the second data line and electrically separated from the first and second data lines, and a memory cell coupled to the first, second, and third data lines. The memory cell includes a first material between the first and second data lines and electrically coupled to the first and second data lines; a second material located over the first data line and the first material, the second material electrically separated from the first material and electrically coupled to the third data line; and a memory element electrically coupled to the second material and electrically separated from the first material and first and second data lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device having shared read/write access line for 2-transistor vertical memory cell","description":"Some embodiments include apparatuses and methods operating the apparatuses. One of the apparatuses includes a first data line located over a substrate, a second data line located over the first data l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942136","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942136","citation_suggestion":"Patentable. \"Memory device having shared read/write access line for 2-transistor vertical memory cell\" (US-11942136). https://patentable.app/patents/US-11942136","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942136","json":"https://patentable.app/api/llm-context/US-11942136","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:37:17.104Z"}