{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942147","patent":{"patent_number":"US-11942147","title":"Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2022-07-25T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory device is provided, which may include a first electrode, a memory layer stack including at least one semiconducting metal oxide layer and at least one hydrogen-containing metal layer, and a second electrode. A semiconductor device is provided, which may include a semiconducting metal oxide layer containing a source region, a drain region, and a channel region, a hydrogen-containing metal layer located on a surface of the channel region, and a gate electrode located on the hydrogen-containing metal layer. Each hydrogen-containing metal layer may include at least one metal selected from platinum, iridium, osmium, and ruthenium at an atomic percentage that is at least 90%, and may include hydrogen atoms at an atomic percentage in a range from 0.001% to 10%. Hydrogen atoms may be reversibly impregnated into a respective semiconducting metal oxide layer to change resistivity and to encode a memory bit."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same","description":"A memory device is provided, which may include a first electrode, a memory layer stack including at least one semiconducting metal oxide layer and at least one hydrogen-containing metal layer, and a s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942147","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942147","citation_suggestion":"Patentable. \"Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same\" (US-11942147). https://patentable.app/patents/US-11942147","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942147","json":"https://patentable.app/api/llm-context/US-11942147","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:07:05.459Z"}