{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942320","patent":{"patent_number":"US-11942320","title":"Method of manufacturing semiconductor structure","assignee":null,"inventors":[],"filing_date":"2021-07-12T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An embodiment of the present disclosure provides a method of manufacturing a semiconductor structure. The method includes: providing a base; and forming a silicon nitride film layer on the base by an atomic layer deposition process, where the atomic layer deposition process includes multiple cyclic deposition steps; in each of the cyclic deposition steps, a silicon source gas and a nitrogen source gas are provided to a surface of the base; before each of the cyclic deposition steps, the method of manufacturing a semiconductor structure further includes a repair step; in the repair step, a repair gas is provided to the surface of the base, and the repair gas is a hydrogen-containing repair gas; the repair gas includes a polar molecule for repairing the surface of the base that is damaged."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor structure","description":"An embodiment of the present disclosure provides a method of manufacturing a semiconductor structure. The method includes: providing a base; and forming a silicon nitride film layer on the base by an ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942320","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942320","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor structure\" (US-11942320). https://patentable.app/patents/US-11942320","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942320","json":"https://patentable.app/api/llm-context/US-11942320","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:14:09.882Z"}