{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942323","patent":{"patent_number":"US-11942323","title":"Method for manufacturing a doped zone of a microelectronic device","assignee":null,"inventors":[],"filing_date":"2021-11-18T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"A method for forming a doped zone of a transistor includes providing a stack having at least one active layer made from a semiconductor material, and a transistor gate pattern having at least one lateral side, and modifying a portion of the active layer so as to form a modified portion made of a modified semiconductor material. The modified portion extends down to the at least one lateral side of the gate pattern, at the edge of a non-modified portion above which the gate pattern is located. The method also includes forming a spacer on the lateral side, removing the modified portion by selective etching of the modified semiconductor material with respect to the semiconductor material of the non-modified portion, so as to expose an edge of the non-modified portion, and forming the doped zone by epitaxy starting from the exposed edge."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a doped zone of a microelectronic device","description":"A method for forming a doped zone of a transistor includes providing a stack having at least one active layer made from a semiconductor material, and a transistor gate pattern having at least one late","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942323","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942323","citation_suggestion":"Patentable. \"Method for manufacturing a doped zone of a microelectronic device\" (US-11942323). https://patentable.app/patents/US-11942323","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942323","json":"https://patentable.app/api/llm-context/US-11942323","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:58:52.771Z"}