{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942329","patent":{"patent_number":"US-11942329","title":"Formation method of semiconductor device with dielectric isolation structure","assignee":null,"inventors":[],"filing_date":"2022-03-03T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device is provided. The method includes forming a semiconductor protruding structure over a substrate and surrounding the semiconductor protruding structure with an insulating layer. The method also includes forming a dielectric layer over the insulating layer. The method further includes partially removing the dielectric layer and insulating layer using a planarization process. As a result, topmost surfaces of the semiconductor protruding structure, the insulating layer, and the dielectric layer are substantially level with each other. In addition, the method includes forming a protective layer to cover the topmost surfaces of the dielectric layer. The method includes recessing the insulating layer after the protective layer is formed such that the semiconductor protruding structure and a portion of the dielectric layer protrude from a top surface of a remaining portion of the insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Formation method of semiconductor device with dielectric isolation structure","description":"A method for forming a semiconductor device is provided. The method includes forming a semiconductor protruding structure over a substrate and surrounding the semiconductor protruding structure with a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942329","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942329","citation_suggestion":"Patentable. \"Formation method of semiconductor device with dielectric isolation structure\" (US-11942329). https://patentable.app/patents/US-11942329","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942329","json":"https://patentable.app/api/llm-context/US-11942329","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:19:42.452Z"}