{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942343","patent":{"patent_number":"US-11942343","title":"Wafer temperature measurement in an ion implantation system","assignee":null,"inventors":[],"filing_date":"2021-01-29T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","G01S","G01S","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":28,"abstract":"The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Wafer temperature measurement in an ion implantation system","description":"The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942343","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942343","citation_suggestion":"Patentable. \"Wafer temperature measurement in an ion implantation system\" (US-11942343). https://patentable.app/patents/US-11942343","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942343","json":"https://patentable.app/api/llm-context/US-11942343","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:58:31.655Z"}