{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942371","patent":{"patent_number":"US-11942371","title":"Etch profile control of via opening","assignee":null,"inventors":[],"filing_date":"2021-04-08T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","B82Y","H01L","H01L"],"num_claims":20,"abstract":"A method comprises forming a gate dielectric cap over a gate structure; forming source/drain contacts over the semiconductor substrate, with the gate dielectric cap laterally between the source/drain contacts; depositing an etch-resistant layer over the gate dielectric cap; depositing a contact etch stop layer over the etch-resistant layer and an interlayer dielectric (ILD) layer over the contact etch stop layer; performing a first etching process to form a via opening extending through the ILD layer and terminating prior to reaching the etch-resistant layer; performing a second etching process to deepen the via opening such that one of the source/drain contacts is exposed, wherein the second etching process etches the etch-resistant layer at a slower etch rate than etching the contact etch stop layer; and depositing a metal material to fill the deepened via opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Etch profile control of via opening","description":"A method comprises forming a gate dielectric cap over a gate structure; forming source/drain contacts over the semiconductor substrate, with the gate dielectric cap laterally between the source/drain ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942371","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942371","citation_suggestion":"Patentable. \"Etch profile control of via opening\" (US-11942371). https://patentable.app/patents/US-11942371","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942371","json":"https://patentable.app/api/llm-context/US-11942371","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:54:12.706Z"}