{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942373","patent":{"patent_number":"US-11942373","title":"Fin isolation structure for FinFET and method of forming the same","assignee":null,"inventors":[],"filing_date":"2023-05-10T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device structure is provided. The semiconductor device structure includes a first fin, a second fin and a third fin therebetween. A first insulating structure includes a first insulating layer formed between the first and third fins, a capping structure covering the first insulating layer, a first insulating liner covering sidewall surfaces of the first insulating layer and the capping structure and a bottom surface of the first insulating layer, and a second insulating liner formed between the first insulating liner and the first fin and between the first insulating liner and the third fin. The second insulating structure includes a second insulating layer formed between the second fin and the third fin and a third insulating liner formed between the second insulating layer and the second fin and between the second insulating layer and the third fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin isolation structure for FinFET and method of forming the same","description":"A semiconductor device structure is provided. The semiconductor device structure includes a first fin, a second fin and a third fin therebetween. A first insulating structure includes a first insulati","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942373","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942373","citation_suggestion":"Patentable. \"Fin isolation structure for FinFET and method of forming the same\" (US-11942373). https://patentable.app/patents/US-11942373","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942373","json":"https://patentable.app/api/llm-context/US-11942373","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:47:03.832Z"}