{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942374","patent":{"patent_number":"US-11942374","title":"Nanosheet field effect transistor with a source drain epitaxy replacement","assignee":null,"inventors":[],"filing_date":"2021-06-17T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","B82Y"],"num_claims":14,"abstract":"A semiconductor structure may include a first nanosheet field-effect transistor formed on a first portion of a substrate, a second nanosheet field-effect transistor formed on a second portion of the substrate, and one or more metal contacts. The first field-effect transistor formed on the first portion of a substrate may include a first source drain epitaxy. A top surface of the first source drain epitaxy may be above a top surface of a top-most nanosheet channel layer. The second nanosheet field-effect transistor formed on the second portion of the substrate may include a second source drain epitaxy and a third source drain epitaxy. The second source drain epitaxy may be below the third source drain epitaxy. The third source drain epitaxy may be u-shaped and may be connected to at least one nanosheet channel layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nanosheet field effect transistor with a source drain epitaxy replacement","description":"A semiconductor structure may include a first nanosheet field-effect transistor formed on a first portion of a substrate, a second nanosheet field-effect transistor formed on a second portion of the s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942374","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942374","citation_suggestion":"Patentable. \"Nanosheet field effect transistor with a source drain epitaxy replacement\" (US-11942374). https://patentable.app/patents/US-11942374","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942374","json":"https://patentable.app/api/llm-context/US-11942374","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:21:30.094Z"}