{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942429","patent":{"patent_number":"US-11942429","title":"Three-dimensional memory device and method of making thereof using double pitch word line formation","assignee":null,"inventors":[],"filing_date":"2021-06-18T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A vertical repetition of multiple instances of a unit layer stack is formed over a substrate. The unit layer stack includes an insulating layer and a sacrificial material layer. Lateral recesses are formed by removing the sacrificial material layers selective to the insulating layers. Each lateral recess is sequentially fill with at least one conductive fill material and an insulating fill material, and vertically-extending portions of the at least one conductive fill material are removed such that a vertical layer stack including a first-type electrically conductive layer, a seamed insulating layer, and a second-type electrically conductive layer are formed in each lateral recess. Memory opening fill structures including a respective vertical stack of memory elements is formed through the insulating layers and the layer stacks. Memory openings, contact via cavities, or backside trenches may be used as access points for removing the sacrificial material layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device and method of making thereof using double pitch word line formation","description":"A vertical repetition of multiple instances of a unit layer stack is formed over a substrate. The unit layer stack includes an insulating layer and a sacrificial material layer. Lateral recesses are f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942429","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942429","citation_suggestion":"Patentable. \"Three-dimensional memory device and method of making thereof using double pitch word line formation\" (US-11942429). https://patentable.app/patents/US-11942429","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942429","json":"https://patentable.app/api/llm-context/US-11942429","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:36:28.701Z"}