{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942517","patent":{"patent_number":"US-11942517","title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-05-13T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A silicon carbide semiconductor device has a silicon carbide substrate, a first insulator, a first electrode, and a second electrode. The silicon carbide substrate includes a first impurity region, a second impurity region, a third impurity region, a first superjunction portion, a fourth impurity region, a fifth impurity region, a sixth impurity region, and a second superjunction portion. The first superjunction portion has a first region and a second region. The second superjunction portion has a third region and a fourth region. In a direction perpendicular to a second main surface, a bottom surface of a first trench is located between a second end surface and the second main surface and is located between a fourth end surface and the second main surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","description":"A silicon carbide semiconductor device has a silicon carbide substrate, a first insulator, a first electrode, and a second electrode. The silicon carbide substrate includes a first impurity region, a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942517","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942517","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device\" (US-11942517). https://patentable.app/patents/US-11942517","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942517","json":"https://patentable.app/api/llm-context/US-11942517","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:43:47.126Z"}