{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942521","patent":{"patent_number":"US-11942521","title":"Epitaxial layers with discontinued aluminium content for III-nitride semiconductor","assignee":null,"inventors":[],"filing_date":"2020-12-30T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present invention provides a semiconductor device, comprising: a substrate (10); a stack of III-nitride transition layers (11) disposed on the substrate (10), the stack of III-nitride transition layers (11) maintaining an epitaxial relationship to the substrate (10); a first III-nitride layer (121) disposed on the stack of III-nitride transition layers (11); and a second III-nitride layer (122) disposed on the first III-nitride layer (121), the second III-nitride layer (122) having a band gap energy greater than that of the first III-nitride layer (121), wherein the stack of III-nitride transition layers (11) comprises a first transition layer (111), a second transition layer (112) on the first transition layer (111), and a third transition layer (113) on the second transition layer (112), and wherein the second transition layer (112) has a minimum aluminium molar ratio among the first transition layer (111), the second transition layer (112) and third transition layer (113). The present invention also relates to a method of forming such semiconductor device. The semiconductor device according to the present invention advantageously has a dislocation density less than or equal to 1×109 cm−2 in the first III-nitride layer (121)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Epitaxial layers with discontinued aluminium content for III-nitride semiconductor","description":"The present invention provides a semiconductor device, comprising: a substrate (10); a stack of III-nitride transition layers (11) disposed on the substrate (10), the stack of III-nitride transition l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942521","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942521","citation_suggestion":"Patentable. \"Epitaxial layers with discontinued aluminium content for III-nitride semiconductor\" (US-11942521). https://patentable.app/patents/US-11942521","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942521","json":"https://patentable.app/api/llm-context/US-11942521","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:14:12.333Z"}