{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942522","patent":{"patent_number":"US-11942522","title":"Method for manufacturing semiconductor structure and semiconductor structure","assignee":null,"inventors":[],"filing_date":"2021-09-08T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"A method for manufacturing a semiconductor structure and the semiconductor structure are provided. The method includes the following operations. A substrate provided with a plurality of active areas arranged at intervals is provided. A first laminated structure and a first photoresist layer are sequentially formed on the substrate. Negative Type Develop (NTD) is performed on the first photoresist layer, to form a first pattern. The first laminated structure is etched along the first pattern, to form a second pattern in the first laminated structure. The substrate is etched up to a preset depth by taking the first laminated structure having the second pattern as a mask, to form a recess and form a plurality of protuberances arranged at intervals on the reserved substrate. The recess surrounds the protuberance, and the active area is exposed between the protuberances."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor structure and semiconductor structure","description":"A method for manufacturing a semiconductor structure and the semiconductor structure are provided. The method includes the following operations. A substrate provided with a plurality of active areas a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942522","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942522","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor structure and semiconductor structure\" (US-11942522). https://patentable.app/patents/US-11942522","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942522","json":"https://patentable.app/api/llm-context/US-11942522","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:07:05.280Z"}