{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942530","patent":{"patent_number":"US-11942530","title":"Semiconductor devices with backside power rail and methods of fabrication thereof","assignee":null,"inventors":[],"filing_date":"2021-12-06T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a top surface and a bottom surface, a first silicide layer formed in contact with the top surface of the source/drain feature, a first conductive feature formed on the first silicide layer, and a second conductive feature having a body portion and a first sidewall portion extending from the body portion, wherein the body portion is below the bottom surface of the source/drain feature, and the first sidewall portion is in contact with the first conductive feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices with backside power rail and methods of fabrication thereof","description":"The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a to","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942530","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942530","citation_suggestion":"Patentable. \"Semiconductor devices with backside power rail and methods of fabrication thereof\" (US-11942530). https://patentable.app/patents/US-11942530","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942530","json":"https://patentable.app/api/llm-context/US-11942530","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:53:59.634Z"}