{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942533","patent":{"patent_number":"US-11942533","title":"Channel structures for semiconductor devices","assignee":null,"inventors":[],"filing_date":"2021-08-31T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","B82Y","H01L"],"num_claims":20,"abstract":"The present disclosure provides channel structures of a semiconductor device and fabricating methods thereof. The method can include forming a superlattice structure with first nanostructured layers and second nanostructured layers on a fin structure. The method can also include removing the second nanostructured layers to form multiple gate openings; forming a germanium epitaxial growth layer on the first nanostructured layers at a first temperature and a first pressure; and increasing the first temperature to a second temperature and increasing the first pressure to a second pressure over a first predetermined period of time. The method can further include annealing the germanium epitaxial growth layer at the second temperature and the second pressure in the chamber over a second predetermined period of time to form a cladding layer surrounding the first nanostructured layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Channel structures for semiconductor devices","description":"The present disclosure provides channel structures of a semiconductor device and fabricating methods thereof. The method can include forming a superlattice structure with first nanostructured layers a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942533","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942533","citation_suggestion":"Patentable. \"Channel structures for semiconductor devices\" (US-11942533). https://patentable.app/patents/US-11942533","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942533","json":"https://patentable.app/api/llm-context/US-11942533","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:11:09.304Z"}