{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11942544","patent":{"patent_number":"US-11942544","title":"Semiconductor device including transistor including horizontal gate structure and vertical channel layer and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2021-09-22T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device includes: a first stacked structure including a first lower dielectric layer, a first horizontal gate structure, and a first upper dielectric layer stacked vertically; a second stacked structure including a second lower dielectric layer, a second horizontal gate structure, and a second upper dielectric layer stacked vertically, and having a first side facing a first side of the first stacked structure; a first channel layer formed on the first side of the first stacked structure; a second channel layer formed on the first side of the second stacked structure; a lower electrode layer commonly coupled to lower ends of the first and second channel layers between the first and second stacked structures; a first upper electrode layer coupled to an upper end of the first channel layer; and a second upper electrode layer coupled to an upper end of the second channel layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including transistor including horizontal gate structure and vertical channel layer and method for fabricating the same","description":"A semiconductor device includes: a first stacked structure including a first lower dielectric layer, a first horizontal gate structure, and a first upper dielectric layer stacked vertically; a second ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11942544","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11942544","citation_suggestion":"Patentable. \"Semiconductor device including transistor including horizontal gate structure and vertical channel layer and method for fabricating the same\" (US-11942544). https://patentable.app/patents/US-11942544","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11942544","json":"https://patentable.app/api/llm-context/US-11942544","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:11:35.618Z"}