{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11943933","patent":{"patent_number":"US-11943933","title":"Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2023-01-17T00:00:00.000Z","publication_date":"2024-03-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","H01L","G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory device includes metal interconnect structures embedded within dielectric material layers that overlie a top surface of a substrate, a thin film transistor embedded in a first dielectric material layer selected from the dielectric material layers, and is vertically spaced from the top surface of the substrate, and a ferroelectric memory cell embedded within the dielectric material layers. A first node of the ferroelectric memory cell is electrically connected to a node of the thin film transistor through a subset of the metal interconnect structures that is located above, and vertically spaced from, the top surface of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same","description":"A memory device includes metal interconnect structures embedded within dielectric material layers that overlie a top surface of a substrate, a thin film transistor embedded in a first dielectric mater","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11943933","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11943933","citation_suggestion":"Patentable. \"Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same\" (US-11943933). https://patentable.app/patents/US-11943933","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11943933","json":"https://patentable.app/api/llm-context/US-11943933","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:18:56.552Z"}