{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11945049","patent":{"patent_number":"US-11945049","title":"SiC wafer manufacturing method and SiC wafer manufacturing apparatus","assignee":null,"inventors":[],"filing_date":"2020-06-03T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["G01N"],"num_claims":12,"abstract":"A method for manufacturing an SiC wafer from an SiC ingot includes a verifying step of applying a test laser beam to the SiC ingot in a predetermined area with the focal point of the test laser beam set inside the SiC ingot at a predetermined depth from the end surface of the SiC ingot. The test laser beam has a transmission wavelength to SiC, thereby forming a test separation layer inside the SiC ingot at the predetermined depth. The test separation layer has a test modified portion where SiC is decomposed into Si and C and test cracks extend from the test modified portion along a c-plane in the SiC ingot. Whether or not the test cracks have been properly formed is verified. When verifying, the power of the test laser beam is changed to set a proper power at which the test cracks are properly formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SiC wafer manufacturing method and SiC wafer manufacturing apparatus","description":"A method for manufacturing an SiC wafer from an SiC ingot includes a verifying step of applying a test laser beam to the SiC ingot in a predetermined area with the focal point of the test laser beam s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11945049","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11945049","citation_suggestion":"Patentable. \"SiC wafer manufacturing method and SiC wafer manufacturing apparatus\" (US-11945049). https://patentable.app/patents/US-11945049","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11945049","json":"https://patentable.app/api/llm-context/US-11945049","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:08:01.218Z"}