{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11946874","patent":{"patent_number":"US-11946874","title":"Method for producing nitride semiconductor laminate, silicon semiconductor product, method for inspecting film quality and method for inspecting semiconductor growth device","assignee":null,"inventors":[],"filing_date":"2019-04-08T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["G01N","G01N","G01N","G01N","G01N","H01L","H01L","G01N","G01N","H01L","H01L","H01L"],"num_claims":10,"abstract":"There is provided a method for producing a nitride semiconductor laminate in which a thin film is homoepitaxially grown on a substrate comprising group III nitride semiconductor crystals, the method including: homoepitaxially growing a thin film on a substrate, using the substrate in which a dislocation density on its main surface is 5×106 pieces/cm2 or less, a concentration of oxygen therein is less than 1×1017 at·cm−3, and a concentration of impurities therein other than n-type impurity is less than 1×1017 at ·cm−3; and inspecting a film quality of the thin film formed on the substrate, wherein in the inspection of the film quality, the film quality of the thin film is inspected by detecting a deviation of an amount of reflected light at a predetermined wavenumber determined in a range of 1,600 cm−1 or more and 1,700 cm−1 or less in a reflection spectrum obtained by irradiating the thin film on the substrate with infrared light, from an amount of reflected light at the predetermined wavenumber determined according to a film thickness of the thin film, a carrier concentration of the substrate, and a carrier concentration of the thin film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing nitride semiconductor laminate, silicon semiconductor product, method for inspecting film quality and method for inspecting semiconductor growth device","description":"There is provided a method for producing a nitride semiconductor laminate in which a thin film is homoepitaxially grown on a substrate comprising group III nitride semiconductor crystals, the method i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11946874","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11946874","citation_suggestion":"Patentable. \"Method for producing nitride semiconductor laminate, silicon semiconductor product, method for inspecting film quality and method for inspecting semiconductor growth device\" (US-11946874). https://patentable.app/patents/US-11946874","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11946874","json":"https://patentable.app/api/llm-context/US-11946874","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:23:54.987Z"}