{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11947228","patent":{"patent_number":"US-11947228","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-08-26T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["G02F","G02F","G02F","G02F","G02F","G02F","G02F","G02F","G02F","G09G","G09G","G09G","G09G","G09G"],"num_claims":5,"abstract":"An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11947228","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11947228","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11947228). https://patentable.app/patents/US-11947228","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11947228","json":"https://patentable.app/api/llm-context/US-11947228","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:02:07.740Z"}