{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948639","patent":{"patent_number":"US-11948639","title":"Methods including a method of forming a stack and isotropically etching material of the stack","assignee":null,"inventors":[],"filing_date":"2021-07-06T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":29,"abstract":"A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers comprising laterally-spaced memory-block regions having horizontally-elongated trenches there-between. Two of the first tiers have different vertical thicknesses relative one another. Channel-material strings of memory cells extend through the first tiers and the second tiers. Through the horizontally-elongated trenches, first conductive material is formed in void space in the two first tiers. The first conductive material fills the first tier of the two first tiers that has a smaller of the different vertical thicknesses in individual of the memory-block regions. The first conductive material less-than-fills the first tier of the two first tiers that has a larger of the different vertical thicknesses in the individual memory-block regions. Through the horizontally-elongated trenches, the first conductive material is isotropically etched from the first tier having the larger vertical thickness in the individual memory-block regions to leave the first conductive material in the first tier having the smaller vertical thickness in the individual memory-block regions. After the isotropically etching of the first conductive material and through the horizontally-elongated trenches, second conductive material is formed in the first tier having the larger vertical thickness in the individual memory-block regions. Other embodiments, including structure independent of method, are disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods including a method of forming a stack and isotropically etching material of the stack","description":"A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers comprising laterally-spaced memory-b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948639","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948639","citation_suggestion":"Patentable. \"Methods including a method of forming a stack and isotropically etching material of the stack\" (US-11948639). https://patentable.app/patents/US-11948639","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948639","json":"https://patentable.app/api/llm-context/US-11948639","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:11:54.883Z"}