{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948794","patent":{"patent_number":"US-11948794","title":"Method of manufacturing silicon carbide epitaxial wafer","assignee":null,"inventors":[],"filing_date":"2021-04-27T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"Provided is a method of manufacturing a silicon carbide epitaxial wafer appropriate for suppressing an occurrence of a triangular defect. A method of manufacturing a silicon carbide epitaxial wafer includes: an etching process of etching a surface of a silicon carbide substrate at a first temperature using etching gas including H2; a process of flattening processing of flattening the surface etched in the etching process, at a second temperature using gas including H2 gas, first Si supply gas, and first C supply gas; and an epitaxial layer growth process of performing an epitaxial growth on the surface flattened in the process of flattening processing, at a third temperature using gas including second Si supply gas and second C supply gas, wherein the first temperature T1, the second temperature T2, and the third temperature T3 satisfy T1>T2>T3."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing silicon carbide epitaxial wafer","description":"Provided is a method of manufacturing a silicon carbide epitaxial wafer appropriate for suppressing an occurrence of a triangular defect. A method of manufacturing a silicon carbide epitaxial wafer in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948794","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948794","citation_suggestion":"Patentable. \"Method of manufacturing silicon carbide epitaxial wafer\" (US-11948794). https://patentable.app/patents/US-11948794","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948794","json":"https://patentable.app/api/llm-context/US-11948794","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:35:41.148Z"}