{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948799","patent":{"patent_number":"US-11948799","title":"Minority carrier lifetime reduction for SiC IGBT devices","assignee":null,"inventors":[],"filing_date":"2021-09-21T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"Provided here are methods and manufacturing systems to implant protons into SiC IGBT devices at multiple depths in the drift layer of the SiC IGBT device. Provides are SiC IGBT devices manufactured with process steps including multiple proton implant processes where the SiC IGBT device is irradiated with ion to affect proton implantation into the SiC IGBT device at multiple depths in the drift region to reduced minority carrier lifetime."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Minority carrier lifetime reduction for SiC IGBT devices","description":"Provided here are methods and manufacturing systems to implant protons into SiC IGBT devices at multiple depths in the drift layer of the SiC IGBT device. Provides are SiC IGBT devices manufactured wi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948799","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948799","citation_suggestion":"Patentable. \"Minority carrier lifetime reduction for SiC IGBT devices\" (US-11948799). https://patentable.app/patents/US-11948799","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948799","json":"https://patentable.app/api/llm-context/US-11948799","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:55:43.765Z"}